PART |
Description |
Maker |
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04 DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04 DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04 DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04 DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04 DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04 DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04 DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04 DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04 DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
KVR133X64C3L256 KVR133X64C3L_256 KVR133X64C3L/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6米x位的PC133 CL3超薄168针DIMM 256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
|
KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KVR133X64C2/256 |
256MB 32M x 64-Bit PC133 CL2 168-Pin DIMM Module
|
Kingston Technology
|
HB52RF649E1U-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM
|
Elpida Memory
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HB52RF1289E2U-75B |
1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC133 SDRAM 1 GB Registered SDRAM DIMM 128-Mword 隆驴 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 隆驴 4 Components) PC133 SDRAM
|
Elpida Memory
|